Rare element to provide better material for high-speed electronics – purdue university gsa 2016 pay scale


Tellurene, a two-dimensional film researchers found in the element tellurium, achieves a stable, sheet-like transistor structure with faster-moving “carriers” – meaning electrons and the holes they leave in their place. Despite tellurium’s rarity, the pros of tellurene would make transistors made from two-dimensional materials easier to produce on a larger scale. The researchers detail their findings in Nature Electronics.

“Even though tellurium is not abundant on the Earth’s crust, we only need a little bit to be synthesized through a solution method. And within the same batch, we have a very high production yield of two-dimensional tellurene materials,” said Wenzhuo Wu, assistant professor in Purdue’s School of Industrial Engineering. “You simply scale up the container that holds the solution, so productivity is high.”

Since electronics are typically in use at room temperature, naturally stable tellurene transistors at this temperature are more practical and cost-effective than other two-dimensional materials that have required a vacuum chamber or low operation temperature to achieve similar stability and performance.

The researchers anticipate that because tellurene can grow on its own without the help of any other substance, the material could possibly find use in other applications beyond computer chip transistors, such as flexible printed devices that convert mechanical vibrations or heat to electricity.

“Tellurene is a multifunctional material, and Purdue is the birthplace for this new material,” Wu said. “In our opinion, this is much closer to the scalable production of two-dimensional materials with controlled properties for practical technologies.”

Wu and Ye’s work was supported by Purdue’s College of Engineering and School of Industrial Engineering, the National Science Foundation, Oak Ridge Associated Universities, the Air Force Office of Scientific Research, the Army Research Office and the Semiconductor Research Corporation. Collaborating paper authors received various funding from fellowships and grants.

The reliable production of two-dimensional (2D) crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a variety of drawbacks, including limitations in crystal size and stability. Here, we report the fabrication of large-area, high-quality 2D tellurium (tellurene) using a substrate-free solution process. Our approach can create crystals with process-tunable thickness, from a monolayer to tens of nanometres, and with lateral sizes of up to 100 µm. The chiral-chain van der Waals structure of tellurene gives rise to strong in-plane anisotropic properties and large thickness-dependent shifts in Raman vibrational modes, which is not observed in other 2D layered materials. We also fabricate tellurene field-effect transistors, which exhibit air-stable performance at room temperature for over two months, on/off ratios on the order of 106, and field-effect mobilities of about 700 cm 2 V −1 s −1. Furthermore, by scaling down the channel length and integrating with high-k dielectrics, transistors with a significant on-state current density of 1 A mm −1 are demonstrated.